isc N-Channel
MOSFET Transistor
FEATURES ·Drain Current –ID=1A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 800V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for low
voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS
Gate-Source
Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max.
Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
800
V
±20
V
1
A
40
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTIC...