SHENZHEN FUMAN ELECTRONICS CO.
, LTD.
3418 (:S&CIC0937)
POWER
MOSFET WAFER DATASHEET
Feature
30V P-channel
MOSFET High Dense Design.
Ultra low On-Resistance.
RDS(ON) 53mΩ @ VGS=-10V RDS(ON) 65mΩ @ VGS=-4.
5V Reliable and Rugged Gross die: 38K
D 3
xxxxxx
12 GS
SOT-23
Applications
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
Die Description
Wafer Diameter: 8 inchs.
(±0.
1 inchs) Wafer Thickness: 8 mils.
(±0.
6mils) Die Size: 960 µm ×810µm.
(Including scribe line) Scribe Line Width: 60µm Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.
Metal Thickness:
Frontside: 4µm, Backside: 1.
4µm.
Bonding Area:
Gate: 120µm ×120...