INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD15C
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 150V(Min.
) ·DC Current Gain-
: hFE= 30~250(Min.
)@IC= 2A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.
5V(Max)@ IC= 2.
5A
APPLICATIONS ·Designed for B&W TV horizontal output , regulated power
supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
200 V
VCEO Collector-Emitter
Voltage
150 V
VEBO
Emitter-Base
Voltage
5V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
W
TJ Junction Temperature
175 ℃
Tstg Storage Temper...