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3DD15A

Inchange Semiconductor
Part Number 3DD15A
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jun 26, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15A DESCRIPTION ·Collector-Emitte...
Datasheet PDF File 3DD15A PDF File

3DD15A
3DD15A

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.
) ·DC Current Gain- : hFE= 30~250(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC= 2.
5A APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.
0 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 3DD15A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.
5A; IB= 0.
25A ICEO Collector Cutoff Current VCE= 30V; IB=0 ICBO Collector Cutoff Current VCB= 30V; IE=0 hFE DC Current Gain IC= 2A; VCE= 10V tf Fall Time IC= 3A; IB1= 0.
2A, IB2= -0.
3A, MIN MAX UNIT 60 V 80 V 5V 1.
5 V 1.
0 mA 0.
5 mA 30 250 1.
0 μs isc website：www.
iscsemi.
cn 2 ...


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