3DD208

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and p...