4AK27
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-728 (Z) 1st.
Edition January 1999 Features
• Low on-resistance R DS(on) ≤ 0.
15Ω, VGS = 10V, ID = 3.
0A • 4V gate drive devices.
• High density mounting
Outline
SP-10
3 D 2G 4 G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1 S
S 10
1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain
4AK27
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy1 Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch(Tc=25˚C) Pch...