4AM11
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N-channel: RDS(on) ≤ 0.
17 Ω, VGS = 10 V, ID = 2.
5 A P-channel: RDS(on) ≤ 0.
2 Ω, VGS = –10 V, ID = –2.
5 A • • • • • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver
4AM11
Outline
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Rating Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 Devices operation S...