isc Silicon NPN Power Transistor
DESCRIPTION ·With SOT-23 packaging ·High collector-base
voltage ·Low saturation
voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio output stage and converters/inverters circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base
Voltage
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
8050
VALUE UNIT
40
V
25
V
5
V
1.
5
A
0.
3
W
150
℃
-55~150 ℃
isc website：www.
iscsemi.
com
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