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Fuji Electric |
FMH09N90E Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS FQA Series ! S Absolute Maximum Ratings Symb |
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Fairchild Semiconductor |
MOSFET • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss . 14 pF) • 100% Avalanche Tested • RoHS compliant April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 13pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless o |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=9A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0 9N90L MIN TY |
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Fairchild Semiconductor |
N-Channel QFET MOSFET • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semi |
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UTC |
N-CHANNEL MOSFET * RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free |
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JILIN SINO |
N-CHANNEL MOSFET Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-247 ORDER MESSAGE - Halogen-Tube JCS9N90FT-F1-B JCS9N90WT-GE-B JCS9N90ABT-GD-B JCS9N90BT-BP-B Order codes - - Ha |
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JILIN SINO |
N-CHANNEL MOSFET Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-247 ORDER MESSAGE - Halogen-Tube JCS9N90FT-F1-B JCS9N90WT-GE-B JCS9N90ABT-GD-B JCS9N90BT-BP-B Order codes - - Ha |
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Unisonic Technologies |
N-CHANNEL MOSFET * RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=4.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durabilit |
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ON Semiconductor |
N-Channel QFET MOSFET • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss . 14 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s p |
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JILIN SINO |
N-CHANNEL MOSFET Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-247 ORDER MESSAGE - Halogen-Tube JCS9N90FT-F1-B JCS9N90WT-GE-B JCS9N90ABT-GD-B JCS9N90BT-BP-B Order codes - - Ha |
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ON Semiconductor |
N-Channel MOSFET • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconduct |
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JILIN SINO |
N-CHANNEL MOSFET Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-247 ORDER MESSAGE - Halogen-Tube JCS9N90FT-F1-B JCS9N90WT-GE-B JCS9N90ABT-GD-B JCS9N90BT-BP-B Order codes - - Ha |
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JILIN SINO |
N-CHANNEL MOSFET Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-247 ORDER MESSAGE - Halogen-Tube JCS9N90FT-F1-B JCS9N90WT-GE-B JCS9N90ABT-GD-B JCS9N90BT-BP-B Order codes - - Ha |
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HUASHAN ELECTRONIC |
N-Channel Enhancement Mode Field Effect Transistor • 9A, 900V(See Note), RDS(on) <1.4Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-3P 1- G 2-D 3-S Tstg——Storage Temperature ----------------- |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 8.6A, 900V, RDS(on) = 1.3Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings S |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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Silan Microelectronics |
900V N-CHANNEL MOSFET ∗ 9A, 900V, RDS(on) (typ.)=1.10Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9N90F SVF9N90PN Package TO-220F-3L TO-3PN Marking SVF9N90F 9N90 Material Pb free Pb |
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