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FQA9N90C_F109

Fairchild Semiconductor
Part Number FQA9N90C_F109
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 16, 2017
Detailed Description FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RD...
Datasheet PDF File FQA9N90C_F109 PDF File

FQA9N90C_F109
FQA9N90C_F109

Overview
FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.
4 Ω Features • 9 A, 900 V, RDS(on) = 1.
4 Ω (Max.
) @ VGS = 10 V, ID = 4.
5 A • Low Gate Charge (Typ.
45 nC) • Low Crss .
14 pF) • 100% Avalanche Tested • RoHS compliant April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D G DS TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed...


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