TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2182
Power Amplifier Applications Driver Stage Amplifier Applications
・High transition frequency: fT = 80 MHz (typ.
)
2SA2182
Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base
voltage
VCBO
− 230
V
Collector-emitter
voltage
VCEO
− 230
V
Emitter-base
voltage
VEBO − 5 V
Collector current Base current
DC pulse
IC
− 1.
0
A
ICP
− 2.
0
A
IB
− 100
mA
1 : BASE 2 : COLLECTOR 3 : EMITTER
Ta = 25°C Collector power dissipation
Tc = 25°C Junction temperature Storage temperature range
PC
Tj Tstg
2 20 150 − 55~150
W W °C °C
Note: Using continuously under heavy loads (e.
g.
the applicati...