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ACE2304
Technology
Description
N-Channel Enhancement Mode
MOSFET
The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
• • • • • • • • • • •
30V/3.
2A, RDS(ON)=65mΩ@VGS=10V 30V/2.
0A, RDS(ON)=90mΩ@VGS=4.
5V Super high density cell design for extremely ...