AO4607 Complementary Enhancement Mode Field Effect Transistor
General Description The AO4607 uses advanced trench technology
MOSFETs to provide excellen RDS(ON) and low gate charge.
The complementary
MOSFETs may be used in inverter and other applications.
A Schottky diode is co-packaged with the nchannel FET to minimize body diode losses.
AO4607 is Pb-free (meets ROHS & Sony 259 specifications).
AO4607L is a Green Product ordering option.
AO4607 and AO4607L are electrically identical.
S2/A G2 S1 G1
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Features
n-channel VDS (V) = 30V ID = 6.
9A (VGS=10V) RDS(ON) 28mΩ (VGS=10V) 42mΩ (VGS=4.
5V) p-channel -30V -6A (VGS=1-0V) RDS(ON) 35mΩ (VGS = -10V) 58mΩ (VGS =- 4.
5V)
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