DatasheetsPDF.com

AO4604

Alpha & Omega Semiconductors
Part Number AO4604
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Jan 25, 2017
Detailed Description AO4604 Complementary Enhancement Mode Field Effect Transistor General Description The AO4604 uses advanced trench techn...
Datasheet PDF File AO4604 PDF File

AO4604
AO4604

Overview
AO4604 Complementary Enhancement Mode Field Effect Transistor General Description The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge.
The complementary MOSFETs may be used in power inverters, and other applications.
AO4604 and AO4604L are electrically identical.
-RoHS Compliant -AO4604L is Halogen Free Features n-channel VDS (V) = 30V ID = 6.
9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.
5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 87mΩ (VGS = -4.
5V) 100% Rg Tested! SOIC-8 D2 D1 Top View Bottom View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 G2 S2 n-channel G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain CurrentB ID IDM 6.
9 5.
8 30 Power Dissipation TA=25°C TA=70°C PD 2 1.
44 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max p-channel -30 ±20 -5 -4.
2 -20 2 1.
44 -55 to 150 Units V V A W °C Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-AmbientA t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-LeadC Steady-State Maximum Junction-to-AmbientA t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-LeadC Steady-State Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ Max Units 48 62.
5 °C/W 74 110 °C/W 35 40 °C/W 48 62.
5 °C/W 74 110 °C/W 35 40 °C/W Alpha & Omega Semiconductor, Ltd.
AO4604 N-CHANNEL: Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=24V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)