July 2003
AO4609 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary
MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Features
n-channel p-channel -30V VDS (V) = 30V ID = 8.
5A -3A RDS(ON) RDS(ON) 18mΩ (VGS=10V) 130mΩ (VGS = 10V) 28mΩ (VGS=4.
5V) 180mΩ (VGS = 4.
5V) 260mΩ (VGS = 2.
5V)
D2 S2 G2 S1 G1
com
D1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2 S2
G1 S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain...