AO6403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
It may be used in common-drain configuration to form a bidirectional blocking switch.
AO6403 is Pb-free (meets ROHS & Sony 259 specifications).
AO6403L is a Green Product ordering option.
AO6403 and AO6403L are electrically identical.
Features VDS (V) = -30V ID = -6 A (VGS = -10V) RDS(ON) 35mΩ (VGS = -10V) RDS(ON) 58mΩ (VGS = -4.
5V) D TSOP6 Top View com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C u...

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