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AO6407

Alpha & Omega Semiconductors
Part Number AO6407
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published May 12, 2020
Detailed Description January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6407 uses advanced tr...
Datasheet PDF File AO6407 PDF File

AO6407
AO6407

Overview
January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.
5V) RDS(ON) < 60mΩ (VGS = -2.
5V) RDS(ON) < 85mΩ (VGS = -1.
8V) TSOP6 Top View D 16 D D 25 D G 34 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5.
5 -4.
5 -30 2 1.
44 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 47.
5 74 37 Max 62.
5 110 50 Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO6407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-16V, VGS=0V Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-4.
5V, ID=-5A Static Drain-Source On-Resistance VGS=-2.
5V, ID=-4A VGS=-1.
8V, ID=-2A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge VGS...


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