isc N-Channel
MOSFET Transistor
AOT2618L
·FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 19mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
60
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous
23
A
IDM
Drain Current-Single Pulsed
70
A
PD
Total Dissipation @TC=25℃
41.
5
W
Tj
Max.
Operating Junction Temperature -55~175 ℃
Tstg
...