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AOT2618L

Alpha & Omega Semiconductors
Part Number AOT2618L
Manufacturer Alpha & Omega Semiconductors
Description 60V N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description The AOT2618L & AOB2618L & AOTF2618L uses trench MO...
Datasheet PDF File AOT2618L PDF File

AOT2618L
AOT2618L

Overview
AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description The AOT2618L & AOB2618L & AOTF2618L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 60V 23A < 19mΩ < 25mΩ 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF2618L G D S AOB2618L G S S AOT2618L G Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter AOT2618L/AOB2618L Symbol Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C AOTF2618L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 41.
5 20.
5 TC=25° C 23 18 ±20 22 16 70 7 5.
5 23 26 23.
5 11.
5 2.
1 1.
3 -55 to 175 A A A mJ W W ° C Avalanche energy L=0.
1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC AOT2618L/AOB2618L 15 60 3.
6 AOTF2618L 15 60 6.
4 Units ° C/W ° C/W ° C/W Rev 0 : July 2012 www.
aosmd.
com Page 1 of 7 Free Datasheet http://www.
datasheet4u.
com/ AOT2618L/AOB2618L/AOTF2618L Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V...


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