isc N-Channel
MOSFET Transistor
AOTF2916L
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 34mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High fast switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
100
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
17
IDM
Drain Current-Single Pulsed
50
PD
Total Dissipation @TC=25℃
23.
5
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal res...