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AOTF2916L

Alpha & Omega Semiconductors
Part Number AOTF2916L
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published May 13, 2020
Detailed Description AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary The AOT2916L & AOTF2916L uses trench MOS...
Datasheet PDF File AOTF2916L PDF File

AOTF2916L
AOTF2916L

Overview
AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary The AOT2916L & AOTF2916L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 100V 23A / 17A < 34mΩ < 43.
5mΩ D G AOT2916L DS G AOTF2916L S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
1mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG AOT2916L AOTF2916L 100 ±20 23 17 16 12 50 5 4 8 3 41.
5 23.
5 20.
5 11.
5 2.
1 1.
3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC AOT2916L 15 60 3.
6 AOTF2916L 15 60 6.
4 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0 : Oct.
2012 www.
aosmd.
com Page 1 of 7 AOT2916L/AOTF2916L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, ...


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