Advanced Power Electronics Corp.
AP50G60SW
RoHS-compliant Product N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching ▼ Low Saturation
Voltage
VCE(sat),Typ.
=2.
6V@IC=33A ▼ Built-in Fast Recovery Diode
G C E
C VCES IC
TO-3P
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE IC@TC=25oC IC@TC=100oC
ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC
TSTG
TJ
TL
Collector-Emitter
Voltage Gate-Emitter
Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp.
for Soldering Purposes
, 1/8" from case for 5 seconds .
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