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AP50G60SW-HF

Advanced Power Electronics
Part Number AP50G60SW-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Apr 9, 2013
Detailed Description AP50G60SW-HF Halogen-Free Product Advanced Power Electronics Corp. Features N-CHANNEL INSULATED GATE BIPOLAR TRANSISTO...
Datasheet PDF File AP50G60SW-HF PDF File

AP50G60SW-HF
AP50G60SW-HF

Overview
AP50G60SW-HF Halogen-Free Product Advanced Power Electronics Corp.
Features N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.
=2.
6V@IC=33A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free VCES IC 600V 45A C G C E TO-3P G E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp.
for Soldering Purposes , 1/8" from case for 5 seconds .
Parameter Collector-Emitter Voltage Rating 600 +30 75 45 150 40 15 300 -55 to 150 150 300 Units V V A A A A A W o o o C C C Notes: 1.
Pulse width limited by max.
junction temperature .
Thermal Data Symbol Rthj-c Rthj-c(Diode) Rthj-a Thermal Resistance Junction-Case Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Parameter http://www.
DataSheet4U.
net/ Value 0.
42 1.
5 40 Units o o o C/W C/W C/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres VF trr Qrr Parameter Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance FRD Forward Voltage FRD Reverse Recovery Time FRD Reverse Recovery Charge VGE=0V VCE=30V f=1.
0MHz IF=15A IF=15A di/dt = 200 A/μs Test Conditions VGE=+30V, VCE=0V VCE=600V, VGE=0V VGE=15V, IC=33A VGE=15V, IC=50A VCE=VGE, IC=250uA IC=33A VCE=400V VGE=15V VCE=390V, Ic=33A, VGE=15V, RG=5Ω, Inductive Load Min.
2 Typ.
2.
6 3.
1 55 12 27 27 22 110 1...


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