| Part Number | ATP304 |
| Manufacturer | ON Semiconductor |
| Title | P-Channel Power MOSFET |
| Description | Ordering number : ENA2192 ATP304 P-Channel Power MOSFET -60V, -100A, 6.5mΩ, ATPAK http://onsemi.com Features • On-resistance RDS(on)1=5.0mΩ(ty... |
| Features |
• On-resistance RDS(on)1=5.0mΩ(typ.) • Input Capacitance Ciss=13000pF(typ.) • 4.5V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage VDSS VGSS Drain Current (DC) Drain Current (Puls... |
| File Size | 384.71KB |
| Datasheet |
|
ATP302 : Ordering number : ENA1654A ATP302 P-Channel Power MOSFET –60V, –70A, 13mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)1=10mΩ (typ.) • 4.5V drive • Input capacitance Ciss=5400pF (typ.) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--36V, L=100μH, IAV=--42A *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --70 --280 70 150 -.
ATP302 : Ordering number : ENA1654 ATP302 www.DataSheet4U.com SANYO Semiconductors DATA SHEET ATP302 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Avalanche resistance guarantee. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --70 --280 70 150 --55 to +150 197 --42 Unit V V A A W °C °C mJ A Note : *1 VDD=--3.
ATP301 : Ordering number : ENA1457A ATP301 P-Channel Power MOSFET –100V, –28A, 75mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)=57mΩ (typ.) • 10V drive • Input capacitance Ciss=4000pF (typ.) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--28A *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --100 ±20 --28 --112 70 150 -.
ATP301 : Ordering number : ENA1457 ATP301 www.DataSheet4U.com SANYO Semiconductors DATA SHEET ATP301 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Avalanche resistance guarantee. 10V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --28 --112 70 150 --55 to +150 54 --28 Unit V V A A W °C °C mJ A Note.