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ATP301

ON Semiconductor
Part Number ATP301
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Nov 6, 2015
Detailed Description Ordering number : ENA1457A ATP301 P-Channel Power MOSFET –100V, –28A, 75mΩ, ATPAK http://onsemi.com Features • ON-res...
Datasheet PDF File ATP301 PDF File

ATP301
ATP301

Overview
Ordering number : ENA1457A ATP301 P-Channel Power MOSFET –100V, –28A, 75mΩ, ATPAK http://onsemi.
com Features • ON-resistance RDS(on)=57mΩ (typ.
) • 10V drive • Input capacitance Ciss=4000pF (typ.
) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--28A *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --100 ±20 --28 --112 70 150 --55 to +150 54 --28 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions ...


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