DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
MBD128
BF1102 Dual N-channel dual gate MOS-FET
Preliminary specification 1999 Jul 08
Philips Semiconductors
Preliminary specification
Dual N-channel dual gate MOS-FET
FEATURES • Two low noise gain controlled
amplifiers in a single package • Specially designed for 5 V applications • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio.
APPLICATIONS • Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.
DESCRIPTION The BF1102 is a combination of two equal dual gate MOS...