isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 1.
3 dB TYP.
@VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain
︱S21︱2 =16dB TYP.
@VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low noise ,high-gain
amplifiers and
linear broadband
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base
Voltage
VCEO Collector-Emitter
Voltage
VEBO Emitter-Base
Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
BFG540
VALUE 20 15 2.
5 120 0.
5 150
-65~150
UNIT V V V mA W ℃ ℃
...