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BFG540

Kexin
Part Number BFG540
Manufacturer Kexin
Description NPN 9GHz Wideband Transistor
Published Jan 10, 2020
Detailed Description SMD Type TTrraannssiissttoorrss NPN 9GHz Wideband Transistor BFG540 ■ Features ● High power gain ● Low noise figure ●...
Datasheet PDF File BFG540 PDF File

BFG540
BFG540

Overview
SMD Type TTrraannssiissttoorrss NPN 9GHz Wideband Transistor BFG540 ■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability.
SOT-143 2.
90±0.
1 1.
30±0.
1 Unit:mm X 0~0.
1 1.
90 (Typ) 4 0.
48 (max) 0.
38 (min) 3 2.
30±0.
2 1.
00±0.
1 0.
1(max) 0.
55 (max) 0.
45 (min) 0.
15 (max) 0.
09 (min) 1 0.
88 (max) 0.
78 (min) 1.
70 (Typ) 2 0.
45 (max) 0.
15 (min) detail X 1.
Collector 3.
Base 2.
Emitter 4.
Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage shorted base Emitter - Base Voltage Collector Current - Continuous Total power dissipation TS≤ 60 °C *1 Thermal resistance from junction to soldering point *1 Junction Temperature Storage Temperature Range *1: Ts is the temperature at the soldering point of the collector pin.
Symbol VCBO VCES VEBO IC Ptot RthJS TJ Tstg Rating 20 15 2.
5 120 400 290 150 -65 to 150 Unit V mA mW ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type TTrraannssiissttoorrss NPN 9GHz Wideband Transistor BFG540 ■ Electrical Characteristics Tj = 25℃, unless otherwise specified.
Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 15 V Emitter - base breakdown voltage VEBO IE= 100 μA， IC= 0 2.
5 Collector-base cut-off current ICBO VCB= 8 V , IE= 0 50 nA DC current gain hFE VCE= 8V, IC= 40mA 60 250 Emitter capacitance Ce IC=ic=0; VEB=0.
5V; f=1MHz 2 Collector capacitance Cc IE=ie=0; VCB=8V; f=1MHz 0.
9 pF Feedback capacitance Cre IC=0; VCB=8V; f=1MHz 0.
5 Γs=Γopt; IC=10mA; VCE=8V;f=900MHz; Tamb=25℃ 1.
3 1.
8 Noise figure F Γs=Γopt; IC=40mA; VCE=8V;f=900MHz; Tamb=25℃ 1.
9 2.
4 Power gain, maximum available (Note 1) GUM Γs=Γopt; IC=10mA; VCE=8V;f=2GHz; Tamb=25℃ IC=40mA; VCE=8V; f=900MHz;Tamb=25℃ IC=40mA; VCE=8V; f=2GHz;Tamb=25℃ 2.
1 dB 18 11 Insertion power gain |S21e|2 IC=40mA; VCE=8V; f=900MHz;Tamb=25℃ 15 1...


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