BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.
5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 150 20 mW 1000 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 90 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 60 °C
Junction temperature Ambient temperature Storage tempe...