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BFP136W

Infineon Technologies AG
Part Number BFP136W
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFP136W NPN Silicon RF Transistor  For power amplifier in DECT and PCN systems  fT = 5.5GHz  Gold metalization for hi...
Datasheet PDF File BFP136W PDF File

BFP136W
BFP136W

Overview
BFP136W NPN Silicon RF Transistor  For power amplifier in DECT and PCN systems  fT = 5.
5GHz  Gold metalization for high reliability 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP136W Maximum Ratings Parameter Marking PAs 1=E Pin Configuration 2=C 3=E 4=B Package SOT343 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 150 20 1000 150 -65 .
.
.
150 -65 .
.
.
150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS  60°C 1) Junction temperature Ambient temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 2) RthJS  90 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-22-2001 BFP136W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 mA, VCE = 5 V hFE 50 100 200 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 12 V Symbol min.
Values typ.
max.
Unit 2 Jun-22-2001 BFP136W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol Values Parameter min.
AC characteristics (verified by random sampling) Transition frequency IC = 80 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.
5 V, f = 1 MHz Noise figure IC = 30 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.
8 GHz Power gain, maximum available 1) IC = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.
8 GHz IC = 80 mA, VCE = 5 V, ZS = ZL = 50 , f = 900 MHz f = 1.
8 GHz Third order int...


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