DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGM1011 MMIC wideband amplifier
Preliminary specification 2002 Jan 14
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
FEATURES • Internally matched to 50 Ω • Very high gain (up to 37 dB at 2 Ghz) • Sloped gain curve for optimal performance with output into lossy cable • 14 dBm saturated output power at 1 GHz • High linearity (23 dBm IP3(out) at 1 GHz) • 40 dB isolation APPLICATIONS • LNB IF
amplifiers • Cable systems • General purpose.
1 2 3
MAM455
BGM1011
PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION
6
5
4
1
6
3
4
2, 5
DESCRIPTION Silicon Monolithic Microwave Integrated Circuit...