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BGM1012

PHILIPS
Part Number BGM1012
Manufacturer PHILIPS
Description MMIC wideband amplifier
Published Apr 21, 2010
Detailed Description DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage MBD128 BGM1012 MMIC wideband amplifier Product...
Datasheet PDF File BGM1012 PDF File

BGM1012
BGM1012

Overview
DISCRETE SEMICONDUCTORS www.
DataSheet4U.
com DATA SHEET book, halfpage MBD128 BGM1012 MMIC wideband amplifier Product specification Supersedes data of 2002 May 16 2002 Sep 06 Philips Semiconductors www.
DataSheet4U.
com Product specification MMIC wideband amplifier FEATURES • Internally matched to 50 Ω • Very wide frequency range (4 Ghz at 3 dB bandwidth) • Very flat 20 dB gain (DC to 2.
9 Ghz at 1 dB flatness) • 10 dBm saturated output power at 1 GHz • High linearity (18 dBm IP3(out) at 1 GHz) • Low current (14.
6 mA) • Unconditionally stable.
APPLICATIONS • LNB IF amplifiers • Cable systems • ISM • General purpose.
DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION CONDITIONS 3 14.
6 20.
1 4.
8 9.
7 TYP.
1 Top view Marking code: C2-.
6 BGM1012 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION 6 5 4 1 3 2 3 MAM455 4 2, 5 Fig.
1 Simplified outline (SOT363) and symbol.
MAX.
4 − − − − UNIT V mA dB dB dBm This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Sep 06 2 Philips Semiconductors www.
DataSheet4U.
com Product specification MMIC wideband amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power Ts ≤ 90 °C CONDITIONS RF input AC coupled − − − −65 − − MIN.
BGM1012 MAX.
4 50 200 +150 150 10 UNIT V mA mW °C °C dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance ...


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