Production specification
N-Channel Power
MOSFET
BL10N30F
FEATURES
High switching speed.
RDS(ON)=0.
65Ω @ VGS=10V.
100% avalanche tested.
Very Good Manufacturing Reliabilty.
Pb
Lead-free
APPLICATIONS
N-Channel Power
MOSFET.
Switching Applications.
ITO-220AB
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
Value
VDS Drain-Source
Voltage
300
Unit V
VGS ID IDM PD EAS EAR PD RθJA RθJC Tj Tstg
Gate -Source
Voltage
Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1
Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2))
Avalanche Energy (Repetitive(Note 3))
Power Dissipation
TC=25℃ Derate above 25°C
Thermal Resistance,Junc...