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BL10N30

GME
Part Number BL10N30
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification N-Channel Power MOSFET BL10N30 FEATURES  High switching speed.  RDS(ON)=0.65Ω @ VGS=10V. ...
Datasheet PDF File BL10N30 PDF File

BL10N30
BL10N30

Overview
Production specification N-Channel Power MOSFET BL10N30 FEATURES  High switching speed.
 RDS(ON)=0.
65Ω @ VGS=10V.
 100% avalanche tested.
 Very Good Manufacturing Reliabilty.
Pb Lead-free APPLICATIONS  N-Channel Power MOSFET.
 Switching Applications.
TO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 300 Unit V VGS ID IDM PD EAS EAR PD RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2)) Avalanche Energy (Repetitive(Note 3)) Power Dissipation TC=25℃ Derate above 25°C Thermal Resistance,Juncti...


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