Part Number
|
BLS7G3135LS-350P |
Manufacturer
|
Ampleon |
Description
|
LDMOS S-band radar power transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLS7G3135L-350P; BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. ...
|
Datasheet
|
BLS7G3135LS-350P
|
Overview
BLS7G3135L-350P; BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev.
4 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
350 W LDMOS power transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W) (dB)
(%)
(ns) (ns)
pulsed RF
3.
1
32 350 12 43 5
5
3.
3
32 350 12 43 5
5
3.
5
32 350 10 39 5
5
1.
2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent...
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