DatasheetsPDF.com

BLS7G3135LS-350P

NXP
Part Number BLS7G3135LS-350P
Manufacturer NXP
Description LDMOS S-band radar power transistor
Published Mar 7, 2016
Detailed Description BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 3 — 29 October 2013 Product data sheet 1. P...
Datasheet PDF File BLS7G3135LS-350P PDF File

BLS7G3135LS-350P
BLS7G3135LS-350P

Overview
BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev.
3 — 29 October 2013 Product data sheet 1.
Product profile 1.
1 General description 350 W LDMOS power transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal f (GHz) VDS PL Gp D (V) (W) (dB) (%) tr tf (ns) (ns) pulsed RF 3.
1 32 350 12 43 5 5 3.
3 32 350 12 43 5 5 3.
5 32 350 10 39 5 5 1.
2 Features and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (3.
1 GHz to 3.
5 GHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  S-Band power amplifiers for radar applica...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)