N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138
General Description These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology.
These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low
voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
Features
• 0.
22 A, 50 V
♦ RDS(on) = 3.
5 W @ VGS = 10 V ♦ RDS(on) = 6.
0 W @ VGS = 4.
5 V
• High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable • Comp...