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BSS138

Fairchild Semiconductor
Part Number BSS138
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 23, 2005
Detailed Description May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enha...
Datasheet PDF File BSS138 PDF File

BSS138
BSS138

Overview
May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features 0.
22 A, 50V.
RDS(ON) = 3.
5Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
Rugged and Relaible Compact industry standard SOT-23 surface mount package.
_______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage T A = 25°C unless otherwise noted BSS138 50 50 ± 20 ± 40 0.
22 0.
88 0.
36 2.
8 -55 to 150 300 Units V V V Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage - Continuous - Non Repetitive (TP < 50 µS) ID PD TJ,TSTG TL Drain Current - Continuous - Pulsed Maximum Power Dissipation Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds A W mW/°C °C °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction to Ambient 350 °C/W © 1997 Fairchild Semiconductor Corporation BSS138 Rev.
A1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 50 V, VGS = 0 V TJ =125°C VDS = 30 V, VGS = 0 V IGSSF IGSSR VGS(th) RDS(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf IS ISM VSD Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 1) 50 0.
5 5 100 100 -100 V µA µA nA nA nA VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 1...


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