Ordering number :EN821C
BTD4M
Silicon Planar Type
Bidirectional Diode
Features
· Small size and light weight.
· DHD type package.
Package Dimensions
unit:mm 1107
[BTD4M]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Peak Current Junction Temperature Storage Temperature Symbol IP Tj Tstg Conditions f=120Hz, pulse width 10µs Rationgs ±2 –40 to +125 –40 to +125 Unit A ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Breakover
Voltage Breakover
Voltage Deviation Breakover Current Temperature Coefficient of Breakover
Voltage Peak Output
Voltage VP 5 Symbol VBO1(VBO2) ∆VBO |VBO1–VBO2| IBO1(IBO2) 0.
1 Conditions Ratings min 29 typ max 37 3 50 Unit V V µA
%/˚C
V
Basic C...