DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ105AB Silicon Diffused Power Transistor
Product specification
October 2001
NXP Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ105AB
GENERAL DESCRIPTION
High-
voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf
PARAMETER
Collector-emitter
voltage peak value Collector-Base
voltage (open emitter) Collector-emitter
voltage (open base) Collector cur...