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BUJ105A

NXP
Part Number BUJ105A
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP...
Datasheet PDF File BUJ105A PDF File

BUJ105A
BUJ105A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector cu...


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