VDS 1200 V
C3M0075120K
ID @ 25˚C
30 A
Silicon Carbide Power
MOSFET TM
C3M
MOSFET Technology
RDS(on) 75 mΩ
N-Channel Enhancement Mode
Features
Package
• C3MTM SiC
MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking
voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
Applica...