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C3M0075120D

CREE
Part Number C3M0075120D
Manufacturer CREE
Description Silicon Carbide Power MOSFET
Published May 1, 2019
Detailed Description VDS 1200 V C3M0075120D ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 m...
Datasheet PDF File C3M0075120D PDF File

C3M0075120D
C3M0075120D

Overview
VDS 1200 V C3M0075120D ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies Part Number C3M0075120D Package TO-247-3 Marking C3M0075120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) ID Continuous Drain Current 1200 -8/+19 -4/+15 30 19.
7 ID(...


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