CEP62A2/CEB62A2
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 55A, RDS(ON) = 10mΩ @VGS = 4.
5V.
RDS(ON) = 14mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20
Units V V A A W W/ C C
±12
55 220 54 0.
36 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Tem...