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CEP62A3

CET
Part Number CEP62A3
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP62A3/CEB62A3 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=1...
Datasheet PDF File CEP62A3 PDF File

CEP62A3
CEP62A3

Overview
CEP62A3/CEB62A3 Feb.
2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=10mΩ @VGS=10V.
RDS(ON)=15m Ω @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D 4 4 D G G D S G S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C Ć20 60 180 60 68 0.
45 -55 to 175 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 4-177 2.
2 62.
5 C/W C/W CEP62A3/CEB62A3 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS b Condition VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = Ć20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 26A VGS = 4.
5V, ID = 21A VGS = 10V, VDS = 5V VDS = 10V, ID = 26A Min Typ Max Unit 30 1 Ć100 V µA nA V mΩ mΩ A 36 1100 S PF PF PF ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 1 8.
5 12 60 3 10 15 DYNAMIC CHARACTERISTICSb Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =15V, VGS = 0V f =1.
0MHZ 600 180 19 36 97 68 VDS =15V, ID = 30A, VGS =10V 35 6 11 4-178 SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 15V, ID =60A, VGEN = 10V RG =24 Ω 48 72 175 135 42 ns ns ns ns nC nC nC CEP62A3/CEB62A3 ELECTRICAL CHARACTERISTICS ...


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