CES2317
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.
1A, RDS(ON) = 80mΩ @VGS = -10V.
RDS(ON) = 90mΩ @VGS = -4.
5V.
RDS(ON) = 120mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-23 package.
DS G
SOT-23
G
D S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage
VDS -30
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID -3.
1 IDM -12
Maximum Power Dissipation
PD 1.
25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symb...