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CES2314

Chino-Excel Technology
Part Number CES2314
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description CES2314 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 70mΩ @...
Datasheet PDF File CES2314 PDF File

CES2314
CES2314

Overview
CES2314 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4A, RDS(ON) = 50mΩ @VGS = 10V.
RDS(ON) = 70mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Lead free product is acquired.
Rugged and reliable.
SOT-23 package.
D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 4 16 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com Rev 1.
2005.
July 1 http://www.
cetsemi.
com CES2314 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 15V, ID = 4A, VGS = 4.
5V VDD = 15V, ID = 4A, VGS = 10V, RGEN = 6Ω 10 3 22 3 5.
3 2.
6 1.
3 1 1.
2 20 8 45 8 7 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4A VGS = 4.
5V, ID = 3A VDS = 5V, ID = 4A 1.
0 40 55 8 650 182 85 Min 30 1 100 -100 3.
0 50 70 Typ Max Units V µA nA nA V mΩ mΩ S pF pF pF 7 VDS = 15V, VGS = 0V, f = 1.
0 MHz Drain-Source D...


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