CED16N10/CEU16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 13.
3A, RDS(ON) = 120mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
100
±20
13.
3 53 43 0.
34
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Charact...