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CEU16N10L

Chino-Excel Technology
Part Number CEU16N10L
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VG...
Datasheet PDF File CEU16N10L PDF File

CEU16N10L
CEU16N10L

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.
3A, RDS(ON) = 115mΩ @VGS = 10V.
RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
G G D CED16N10L/CEU16N10L PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 13.
3 53 43 0.
34 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.
5 50 Units C/W C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 1.
2010.
Jan.
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