CPD73

CPD79 : PROCESS Schottky Rectifier CPD79 2 Amp Schottky Rectifier Chip PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 49 x 49 MILS 9.8 MILS 39 x 39 MILS Al/Ni/Au - 30,000Å/3,000Å/1,500Å Ti/Ni/Au - 1,600Å/5,500Å/1,600Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,608 PRINCIPAL DEVICE TYPE CTLSH2-40M832 R0 (19-July 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPD79 Typical Electrical Characteristics R0 (19-July 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com .

CPD76X : PROCESS CPD76X Schottky Diode 1 Amp Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 32 x 32 MILS 5.9 MILS 27 x 27 MILS Al - 20,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 16,276 PRINCIPAL DEVICE TYPES CMLSH1-40 CXSH-4 CTLSH1-40M832D R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPD76X Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com .

CPD74 : PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip www.DataSheet4U.com PROCESS DETAILS Die Size Die Thickness Anode 1, 2, 3, 4 Bonding Pad Area Cathode 1, 2, 3, 4 Bonding Pad Area Top Side Metalization Back Side Metalization 25 x 25 MILS 6.0 MILS 3.5 x 4.0 MILS 3.5 x 4.0 MILS Al - 12,000Å Au - 5,000Å GEOMETRY GROSS DIE PER 3 INCH WAFER 10,000 PRINCIPAL DEVICE TYPES CMEDA-6i R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD74 Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m .